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Freescale Semiconductor Technical Data
Document Number: MRFE6S9201H Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. * Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 40 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz, PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 20.8 dB Drain Efficiency -- 31.3% Device Output Signal PAR -- 8.1 dB @ 0.01% Probability on CCDF ACPR @ 750 kHz Offset -- - 46.5 dBc in 30 kHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 270 W CW (2 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6S9201HR3 MRFE6S9201HSR3
880 MHz, 40 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRFE6S9201HR3
CASE 465A - 06, STYLE 1 NI - 780S MRFE6S9201HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS Tstg TC TJ
Value - 0.5, +66 - 6.0, +10 - 65 to +150 150 225
Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 85C, 197 W CW Case Temperature 75C, 40 W CW Symbol RJC Value (2,3) 0.34 0.33 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
MRFE6S9201HR3 MRFE6S9201HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 4.11 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 2.3 90 480 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1.5 2.25 0.1 2.2 2.9 0.21 3 3.75 0.35 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 10 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 40 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched on input. (continued) Gps D PAR ACPR IRL 19.5 29 7.7 -- -- 20.8 31.3 8.1 - 46.5 - 16 22.5 -- -- - 45 -9 dB % dB dBc dB
MRFE6S9201HR3 MRFE6S9201HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit MHz -- 10 -- Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 865 - 900 MHz Bandwidth Video Bandwidth @ 200 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 35 MHz Bandwidth @ Pout = 40 W Avg. Average Deviation from Linear Phase in 35 MHz Bandwidth @ Pout = 200 W CW Average Group Delay @ Pout = 200 W CW, f = 880 MHz Part - to - Part Insertion Phase Variation @ Pout = 200 W CW, f = 880 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) VBW
GF Delay G P1dB
-- -- -- -- -- --
0.19 0.461 11.66 14.97 0.011 0.39
-- -- -- -- -- --
dB ns dB/C dBm/C
MRFE6S9201HR3 MRFE6S9201HSR3 RF Device Data Freescale Semiconductor 3
B1 VBIAS R4 + C2 C4 R1 RF INPUT C8 Z1 C1 C43 C6 B2 + R3 C3 C5 C7 C9 R2 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
+ C20 Z10 C10 Z12 Z13 Z14 Z15 C40 Z16 C12 Z17 C13 Z18 C16 Z19 C18 Z20 C29 C31 C30 C28 C27 C42
+ C26
VSUPPLY
C21 Z21
C22 Z22 Z23 Z24 Z25 C39 Z26
RF OUTPUT
C11 DUT
Z11
C41
C15
C14
C17
C19
C23
C24
C25
C32
C38
+ C44 C46 C37 C36 C35 C34 C33
+ C45
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
0.227 0.938 0.492 0.046 0.094 0.141 0.076 0.023 0.170
x 0.065" Microstrip x 0.065" Microstrip x 0.065" Microstrip x 0.300 Microstrip x 0.300 Microstrip x 0.546 x 0.300 Taper x 0.734 x 0.546 Taper x 0.780 x 0.734 Taper x 0.780 Microstrip
Z10, Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18
0.853 0.084 0.086 0.035 0.093 0.131 0.047 0.054
x 0.100 x 0.780 x 0.780 x 0.780 x 0.709 x 0.499 x 0.365 x 0.365
Microstrip Microstrip Microstrip x 0.709 Taper x 0.499 Taper x 0.286 Taper Microstrip Microstrip
Z19 Z20 Z21, Z22 Z23 Z24 Z25 Z26 PCB
0.020 x 0.365 Microstrip 0.097 x 0.065 Microstrip 0.050 x 0.065 Microstrip 0.305 x 0.065 Microstrip 0.456 x 0.065 Microstrip 0.357 x 0.065 Microstrip 0.340 x 0.065 Microstrip Taconic RF - 35, 0.030, r = 3.5
Figure 1. MRFE6S9201HR3(HSR3) Test Circuit Schematic
MRFE6S9201HR3 MRFE6S9201HSR3 4 RF Device Data Freescale Semiconductor
Table 5. MRFE6S9201HR3(HSR3) Test Circuit Component Designations and Values
Part B1, B2 C1, C4, C5, C20, C39, C44 C2, C3 C6, C32, C38, C43 C7, C12, C13, C14, C15, C16, C17, C25 C8, C9 C10, C11 C18, C19, C21, C22, C23, C24 C26, C45 C27, C34 C28, C35 C29, C31, C37, C46 C30, C36 C33, C42 C40, C41 R1, R2 R3, R4 Description Short RF Beads 33 pF Chip Capacitors 10 F, 50 V Tantalum Capacitors 0.6 - 4.5 pF Variable Capacitors, Gigatrim 3.3 pF Chip Capacitors 4.7 pF Chip Capacitors 15 pF Chip Capacitors 1.0 pF Chip Capacitors 470 F, 63 V Electrolytic Capacitors 1.2K pF Chip Capacitors 20K pF Chip Capacitors 10 F, 50 V Chip Capacitors 0.047 pF, 50 V Chip Capacitors 22 F, 50 V Tantalum Capacitors 5.6 pF Chip Capacitors 12 , 1/4 W Chip Resistors 1 K, 1/4 W Chip Resistors Part Number 2743019447ROP50 ATC100B330JT500XT T491C106K050AT 27271SL ATC600F3R3BT250XT ATC600F4R7BT250XT ATC100B6R8JT500XT ATC600F1R0BT250XT EKMG630ELL331MJ20S ATC100B1R2BT500XT ATC200B203MT50XT GRM55DR61H106KA88B C1825C473J5RAC T491C226K050AT ATC600F5R6BT250XT CRCW120612R0FKEA CRCW12061001FKEA Manufacturer Fair - Rite ATC Kemet Johanson ATC ATC ATC ATC United Chemi - Con ATC ATC Murata Kemet Kemet ATC Vishay Vishay
R4 B1 C26 C2 C4 R1 C10 C40 C16 C18 C1 C7 CUT OUT AREA C6 C5 C43 C9 R2 C8 C12 C13 C21 C14 C23 C15 C24 C41 C17 C19 C22 C25
C27 C28 C30
C31
C42 C29 C20 C39
C32
C38
C46 C11 MRFE6S9201H/HS Rev. 0 C44 C33
C3
R3
C37 B2 C45 C34 C35 C36
Figure 2. MRFE6S9201HR3(HSR3) Test Circuit Component Layout
MRFE6S9201HR3 MRFE6S9201HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
22 21 20 Gps, POWER GAIN (dB) 19 18 17 16 15 14 13 12 800 ALT1 820 840 860 880 900 920 940 ACPR IRL VDD = 28 Vdc, Pout = 40 W (Avg.) IDQ = 1400 mA, N-CDMA IS-95 Pilot Sync, Paging, Traffic Codes 8 Through 13 D D, DRAIN EFFICIENCY (%) Gps 40 35 30 25 20 -40 -45 -50 -55 -60 -65 960
ACPR (dBc), ALT1 (dBc)
0 -5 -10 -15 -20 -25
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 40 Watts Avg.
22 21 20 Gps, POWER GAIN (dB) 19 18 17 ACPR 16 15 14 13 12 800 ALT1 820 840 860 880 900 920 940 IRL Gps VDD = 28 Vdc, Pout = 84 W (Avg.) IDQ = 1400 mA, N-CDMA IS-95 Pilot Sync, Paging, Traffic Codes 8 Through 13 50 40 30 20 -30 -35 -40 -45 -50 -55 -60 960 D, DRAIN EFFICIENCY (%)
D
ACPR (dBc), ALT1 (dBc)
0 -5 -10 -15 -20 -25
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 84 Watts Avg.
23 IDQ = 2100 mA 22 Gps, POWER GAIN (dB) 1750 mA 21 1400 mA 20 1050 mA 19 700 mA 18 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 1400 mA -60 -70 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 2100 mA 1750 mA 1050 mA
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements IDQ = 700 mA
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRFE6S9201HR3 MRFE6S9201HSR3 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 0 VDD = 28 Vdc, IDQ = 1400 mA f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements -10 VDD = 28 Vdc, Pout = 200 W (PEP), IDQ = 1400 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz IM3-U IM3-L -40 IM5-U IM5-L
-20
-20
-40 3rd Order -60
-30
-80
5th Order 7th Order
-50
IM7-U IM7-L
-100 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP
-60 1 10 TWO-TONE SPACING (MHz) 100
Figure 7. Intermodulation Distortion Products versus Output Power
63 62 61 60 59 58 57 56 55 54 53 52 51 29 30 31 32 33 P1dB = 53.21 dBm (209.41 W)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
P6dB = 54.86 dBm (306.2 W) Ideal P3dB = 54.18 dBm (261.82 W)
Pout, OUTPUT POWER (dBm)
Actual
VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW 12 sec(on), 1% Duty Cycle, f = 880 MHz 34 35 36 37 38 39 40
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 70 VDD = 28 Vdc, IDQ = 1400 mA 60 f = 880 MHz, N-CDMA IS-95 (Pilot Sync, Paging, Traffic Codes 8 50 Through 13) 40 30 Gps 20 ALT1 10 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 D 85_C 25_C -80 -90 300 TC = -30_C -70 ACPR 25_C 85_C -60 85_C -20 -30 -30_C -40 -50 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc)
25_C
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power
MRFE6S9201HR3 MRFE6S9201HSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
23 22 Gps, POWER GAIN (dB) 21 20 19 18 17 16 1 10 100 Pout, OUTPUT POWER (WATTS) CW D VDD = 28 Vdc IDQ = 1400 mA f = 880 MHz 85_C Gps TC = -30_C 25_C 85_C 50 40 30 20 10 VDD = 24 V 0 400 18 0 50 100 150 200 250 300 350 Pout, OUTPUT POWER (WATTS) CW 28 V 32 V -30_C 70 25_C 60 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 21 22 IDQ = 1400 mA f = 880 MHz
20
19
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
108
Figure 12. Power Gain versus Output Power
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 40 W Avg., and D = 31.3%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 13. MTTF versus Junction Temperature
MRFE6S9201HR3 MRFE6S9201HSR3 8 RF Device Data Freescale Semiconductor
N - CDMA TEST SIGNAL
100 10 -30 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) -40 -50 -60 -70 -80 -90 -100 -110 -3.6 -2.9 -2.2 -1.5 -0.7 0 0.7 1.5 2.2 2.9 3.6 -10 -20 1.2288 MHz Channel BW . .. .... .. .. .................... ........ .. . ...... ...... ............. . .. . . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . . . ............ ........... ...... ...... .... ..... .. . ... .. . . ...... . ....... .. ....... .... . .... . .. ......... . ...... .. ... .. ..... .... ....... . .... .... . . ... ..... .... .. ..... ........ .. ... ....... .... ........ ... ...... ..... .. ...... .. ........ -ACPR in 30 kHz +ACPR in 30 kHz .......... .. ...... . . ......... ...... . ............ .. ..... ........ . . .... ............ . Integrated BW Integrated BW . .. ... ............. .... ..... .. ... .......... .. . ... .. .
Figure 14. Single - Carrier CCDF N - CDMA
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRFE6S9201HR3 MRFE6S9201HSR3 RF Device Data Freescale Semiconductor 9
Zo = 5 Zload f = 820 MHz
f = 980 MHz
Zsource f = 820 MHz f = 980 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 40 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zsource W 3.28 - j3.94 3.12 - j3.93 2.85 - j3.73 2.58 - j3.39 2.44 - j2.98 2.43 - j2.87 2.31 - j2.66 2.17 - j2.54 1.91 - j2.39 Zload W 0.78 + j0.24 0.81 + j0.36 0.83 + j0.51 0.82 + j0.70 0.83 + j0.98 1.02 + j1.60 4.12 + j1.11 1.49 - j0.66 0.90 - j0.26
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRFE6S9201HR3 MRFE6S9201HSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRFE6S9201HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRFE6S9201HSR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MRFE6S9201HR3 MRFE6S9201HSR3 RF Device Data Freescale Semiconductor 11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Sept. 2007 Dec. 2008 * Initial Release of Data Sheet * Updated Typical Performance Full Frequency Band to f = 880 MHz to match production test, p. 1 * Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 5 Description
MRFE6S9201HR3 MRFE6S9201HSR3 12 RF Device Data Freescale Semiconductor
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MRFE6S9201HR3 MRFE6S9201HSR3
Document Number: RF Device Data MRFE6S9201H Rev. 1, 12/2008 Freescale Semiconductor
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